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Union Precision
Semiconductor packaging
In semiconductor packaging, a ceramic substrate is a special process plate in which copper foil is bonded to the surface of the ceramic substrate direcly (single or double-sided) at high temperature. The mainly types include Beryllium Oxide (BeO), Alumina (Al2O3) and Aluminum Nitride (AlN), Silicon Nitride (Si3N4).
characteristic:
1. Strong mechanical stress and stable shape;
2. Excellent thermal cycle performance, cycle times up to 550,000, high reliability;
3. Same with PCB board ((or IMS substrate)) can be etched out of a variety of graphic structure;
4. No pollution and pollution-free;
5. Wide temperature range -55℃～850℃；
6. Thermal expansion coefficient is close to silicon, simplifying the production process of power module.
Processing process:
Ceramic substrate rough grinding process effect
| Diamond Pad Specifications | Rough grinding diamond pads for ceramics |
| Processing results | Processing data |
| Removal rate（um/min） | 10-15 |
| RoughnessRa（um） | <0.6 |
Ceramic substrate rough grinding process effect
| Diamond Pad Specifications | Rough grinding diamond pads for ceramics |
| Processing results | Processing data |
| Removal rate（um/min） | 7-10 |
| RoughnessRa（um） | <0.4 |
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