Sapphire Processing

LED Sapphire Substrate Wafer Processing

Single-side lapping process: we can provide 3um water-based, oil-based diamond slurry, used with copper disc and resin copper plate.

Single-side polishing process: we can provide silica polishing slurry, used with polishing pad.

LED chip back side copper lapping process: we can provide 6um water-based, oil-based diamond slurry.

LED Sapphire Substrate Wafer Processing Example:

Slurry size: 3um polycrystalline diamond slurry;

1, Processing wafer: C plane of the sapphire wafer, 2 inches;

2, Grinding plate: resin copper plate, diameter 910mm;

3, Add slurry method: spray;

4, The process parameters:

5, Processing results:

Below plate speed（rpm）	Pressure head speed（rpm）	Single head pressure（kg）	Single head number（sheet）	Single disc number（sheet）	Disc temperature control(℃)
50	50	60	16	64	≤30

Removal rate: 0.8-1.0um / min;

Yield: ≥98%;

Slurry size: 6um polycrystalline diamond slurry;

1, Processing wafer: C plane of the sapphire wafer, 2 inches;

2, Grinding plate: copper plate, diameter 910mm;

3, Add slurry method: spray;

4, The process parameters:

Below plate speed（rpm）	Pressure head speed（rpm）	Single head pressure（kg）	Single head number（sheet）	Single disc number（sheet）	Disc temperature control（℃）
50	50	80	16	64	≤30

 

5, processing results:

Removal rate: 2.5-3.0um / min;

Yield: ≥98%;

Sapphire Window Processing

Double-side lapping process: we can provide 3um water-based diamond slurry, used with resin copper plate;

We can provide 18um water-based diamond slurry, used with polishing pad;

Double-side polishing process:we can provide silica and alumina polishing slurry, used with polishing pad.

Sapphire Window Processing Example:

Slurry size: 3um polycrystalline diamond slurry;

1, Processing wafer: C plane of the sapphire wafer, 2 inches;

2, Grinding plate: resin copper plate, diameter 910mm;

3, Add slurry method: spray;

4, The process parameters:

Below plate speed（rpm）	Pressure head speed（rpm）	Single head pressure（kg）	Single head number（sheet）	Single disc number（sheet）	Disc temperature control（℃）
50	50	90	16	64	≤30

5, processing results:

Removal rate: 1.0-1.2um / min; Yield: ≥98%;

Slurry size: 18um polycrystalline diamond slurry;

1, Processing wafer: C plane of the sapphire wafer, 2 inches;

2, Grinding pad: 18B, double-side processing, high hardness grinding pad;

3, Add slurry method: dropping;

4, The process parameters:

Below plate speed（rpm）	pressure（kg）	Number of sheets processed（sheet）	Polishing pad style
30	420	140	Under the dense sparse

5, processing results:

Removal rate: 0.7-0.9um / min; Yield: ≥98%;